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AS5140H
Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s
Table 8. CMOS Output: A, B, Index, PWM (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V OL
Low level output voltage
V SS +0.4
V
I O
Output current
VDD5V:4.5V
VDD5V:3V
4
2
mA
Table 9. Tristate CMOS Output: DO
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V OH
V OL
High level output voltage
Low level output voltage
VDD5V-
0.5
V SS +0.4
V
V
I O
I OZ
Output current
Tri-state leakage current
VDD5V:4.5V
VDD5V:3V
4
2
1
mA
μA
6.2 Magnetic Input Specification
Table 10. Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Magnetic Input Specification (Two-pole cylindrical diametrically magnetized source)
d mag
t mag
B pk
B off
f mag_abs
f mag_inc
Disp
Diameter
Thickness
Magnetic input field amplitude
Magnetic offset
Field non-linearity
Input frequency (rotational speed of
magnet)
Displacement Radius
Chip placement tolerance
Recommended magnet material and
temperature drift
Recommended magnet: ? 6mm x 2.5mm
for cylindrical magnets
Required vertical component of the
magnetic field strength on the die’s surface,
measured along a concentric circle with a
radius of 1.1mm
Constant magnetic stray field
Including offset gradient
Absolute mode: 600 rpm @ readout of 1024
positions (see Table 19)
Incremental mode: no missing pulses at
rotational speeds of up to 10.000 rpm (see
Table 19)
Max. X-Y offset between defined IC
package center and magnet axis (see
Figure 19)
Max. X-Y offset between chip center and
magnet axis
Placement tolerance of chip within IC
package (see Figure 21)
NdFeB (Neodymium Iron Boron)
SmCo (Samarium Cobalt)
4
2.5
45
6
-0.12
-0.035
75
±10
5
10
166
0.25
0.485
±0.235
mm
mT
mT
%
Hz
Hz
mm
mm
%/K
6.3 Electrical System Specifications
Table 11. Electrical System Specifications
Symbol
RES
Parameter
1
Resolution
Conditions
0.352 deg
Min
Typ
Max
10
Units
bit
www.austriamicrosystems.com/AS5140H
Revision 1.4
8 - 37
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